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OBIC Measurements on 6H-SiC Schottky Diodes

Published online by Cambridge University Press:  15 February 2011

K. Rottner ,
A. Schöner ,
M. Frischholz  and
R. Helbig
K. Rottner
Affiliation:
IMC, P.O. Box 1084, S-16421 Stockholm-Kista, Sweden
A. Schöner
Affiliation:
IMC, P.O. Box 1084, S-16421 Stockholm-Kista, Sweden
M. Frischholz
Affiliation:
Institut für Angewandte Physik, Universität Erlangen, Staudtstr. 7, D-91058 Erlangen, Germany
R. Helbig
Affiliation:
Institut für Angewandte Physik, Universität Erlangen, Staudtstr. 7, D-91058 Erlangen, Germany
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Abstract

The OBIC (Optical Beam Induced Current) technique is a powerful method to investigate the electric field distribution of p-n junctions in SiC. In a previous work we found strong indications for the presence of a high density of negative surface charge in n-type SiC. In order to study samples of both conductivity types under similar conditions we prepared Schottky contacts on ntype and p-type 6H-SiC CVD epitaxial layers.

OBIC measurements show an extension of the depletion region of several hundreds of microns from the edge of the contact on n- and p-type samples, thus interconnecting diodes on an area up to several mm2. Our results imply that there is no fixed surface charge but a high density of both acceptor- and donorlike surface states leading to a dependence of the net surface charge on the Fermi energy, in which case the sign of the surface charge reverses from negative on ntype material to positive on p-type 6H-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 51
Copyright
Copyright © Materials Research Society 1996

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References

1. Kordina, O., Bergman, J. P., Henry, A., Janzén, E., Savage, S., André, J., Ramberg, L. P., Lindefelt, U., Hermansson, W., and Bergman, K., Appl. Phys. Lett. 67 (11), 1561 (1995).Google Scholar
2. Rottner, K., Savage, S., André, J., Ramberg, L., Frischholz, M., and R. Helbig in Proc. 6th Int. Conf. on Silicon Carbide and Related Materials - 1995, Sept. 18–21, 1995, Kyoto, Japan.Google Scholar
3. Frischholz, M., Mandel, Th., Helbig, R., Hammerschmidt, A., and Schmidt, G., Appl. Surface Science 65/66, 784 (1993).Google Scholar
4. Choyke, W. J., Patrick, L., Phys. Rev. 172, 769 (1968).Google Scholar
5. Pensl, G., Choyke, W. J., Physica B 185, 264 (1993).Google Scholar
6. Schadt, M., Pensl, G., Devaty, R. P., Choyke, W. J., Stein, R., and Stephani, D., Appl. Phys. Lett. 65 (24), 3120 (1994).Google Scholar