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Observation of Gas Flow Patterns In A CVD Reactor For Wide Band Gap Semiconductor Thin Film Deposition

Published online by Cambridge University Press:  25 February 2011

Kinya Atsumi ,
Yoshiki Ueno ,
Tadashi Hattori  and
Yoshihiro Hamakawa
Kinya Atsumi
Affiliation:
Research Laboratories, Nippondenso Co., Ltd. Nissin-cho, Aichi 470–01, JAPAN
Yoshiki Ueno
Affiliation:
Research Laboratories, Nippondenso Co., Ltd. Nissin-cho, Aichi 470–01, JAPAN
Tadashi Hattori
Affiliation:
Research Laboratories, Nippondenso Co., Ltd. Nissin-cho, Aichi 470–01, JAPAN
Yoshihiro Hamakawa
Affiliation:
Faculty of Engineering Science, Osaka University, 1–1 Machikaneyama, Toyonaka, Osaka 560, JAPAN
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Abstract

A new method for the direct observation of two-dimensional gas flow patterns in a CVD reactor has been developed by combining a laser scanning technique with generating micron-sized TiO2 particles. With this specially developed technology, the size of generated TiO2 particles are quite uniform, and of high density by the use of hydrolysis of Ti-alkoxide in the ceramic honeycomb at the top inlet of the model chamber. In this system, vertical cross sections of the gas flow patterns can be visualized by illuminated TiO2 particles in a He-Ne laser light sheet. Using this technique, detailed gas flow patterns can be clearly identified in the reaction chamber. Changes in the gas flow patterns with the various growth conditions, such as gas flow rate and pressure, have been measured. In this presentation, GaAs thin film growth by the MOCVD method will be reported as an example.

This gas flow visualization method could be a useful tool to identify the mechanism of CVD reactions to give better understanding about carrier gas transport and thin film growth for wide band gap semiconductors such as GaN, a-SiC, SiNx, etc.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 721
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Hamakawa, Y. and Tawada, Y., Int. J. Solar Energy, 1 (1982) 251 Google Scholar
2. Hattori, Y., Kruangam, D., Katon, K., Nitta, Y., Okamotoand, H., Hamakawa, Y., Proc. 19th IEEE Photovoltatic Specialists Conference, (1987) 689 Google Scholar
3. Nishizawa, J., Abe, H. and Kurabayashi, T., J. Electrochem. Soc, 132 (1985) 1197 Google Scholar
4. Doi, A., Aoyagi, Y. and Namba, S., Appl. Phys. Lett, 48 (1986) 1787 Google Scholar
5. Horikoshi, Y., Kawashima, M. and Yamaguchi, H., Jpn. J. Appl. Phys, v (1986) L868 Google Scholar
6. Giling, L. J., J. Electrochem. Soc, 129 (1982) 634 Google Scholar
7. Williams, J. E. and Peterson, R. W., J. Cryst. Growth, 77 (1986) 128 Google Scholar
8. Wang, C. A., Groves, S. H., Palmateer, S. C., Weyburne, D. W. and Brown, R. A., J. Cryst. Growth, 77 (1986) 136 CrossRefGoogle Scholar
9. Fotiadis, D. I., Kremer, A. M., McKenna, D. R. and Jensen, K. F., J. Cryst. Growth, 85 (1987) 154 Google Scholar
10. Keijser, M. D., Opdorp, C. V. and Weber, C., J. Cryst. Growth 92 (1988) 33 Google Scholar