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On The Nature of Multiple Orientation Relationships in Epitaxial Silicides

Published online by Cambridge University Press:  25 February 2011

L.E. Felton ,
S. Dakshinamurthy  and
K. Rajan
L.E. Felton
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
S. Dakshinamurthy
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
K. Rajan
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

The Invariant Line Criteria (ILC) has been used to explain experimentally observed precipitation and epitaxial orientation relationships in a number of metallurgical systems. We propose that ILC may explain the crystallography of misoriented silicide grains in epitaxially grown silicide films. We test our hypothesis on the case of misoriented grains in CoSi2 on Si (001). Our analysis shows that the experimentally observed orientation relationship is predicted by the ILC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 7
Copyright
Copyright © Materials Research Society 1991

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References

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