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On the Structure, Composition, and I–V Characteristics of AL/Ti:W/a-Si Contacts.

Published online by Cambridge University Press:  25 February 2011

S. Berger  and
Y. Komem
S. Berger
Affiliation:
Department of Materials Engineering, Technion, Haifa ISRAEL
Y. Komem
Affiliation:
On leave from the Technion, IBM, T.J.Watson Research Center, Yorktown Heights, NY 10598.
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Abstract

The effect of heat treatments on the microstructure, composition and I–V characteristics of Al/TiW/a-Si contacts was studied.

It was found that heat; treatments of the amorophized contacts at the temperature range of 450–520°C led to an interdiffusion of Si atoms into the Al film and of Al atoms into the a-Si region through the Ti:W layer and silicides formation.However, no such interdiffusion and silicides formation could be detected in the contacts made of the unamorphized Si substrate under identical heat treatments.

The I–V characteristics of the amorphized contacts are explained by a model of electrical conductivity in amorphous solids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 647
Copyright
Copyright © Materials Research Society 1989

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References

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