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Optical properties of InGaAs QDs grown in a GaAs matrix by MOCVD, emitting at 1300 nm at room temperature

Published online by Cambridge University Press:  01 February 2011

M. T. Todaro ,
M. De Giorgi ,
V. Tasco ,
M. De Vittorio ,
A. Passaseo  and
R. Cingolani
M. T. Todaro
Affiliation:
National Nanotechnology Laboratory of INFM (NNL-INFM), Dipartimento di Ingegneria dell' Innovazione, Università di Lecce, Via Arnesano, 73100 Lecce (ITALY). E-mail: mariateresa.todaro@unile.it
M. De Giorgi
Affiliation:
National Nanotechnology Laboratory of INFM (NNL-INFM), Dipartimento di Ingegneria dell' Innovazione, Università di Lecce, Via Arnesano, 73100 Lecce (ITALY). E-mail: mariateresa.todaro@unile.it
V. Tasco
Affiliation:
National Nanotechnology Laboratory of INFM (NNL-INFM), Dipartimento di Ingegneria dell' Innovazione, Università di Lecce, Via Arnesano, 73100 Lecce (ITALY). E-mail: mariateresa.todaro@unile.it
M. De Vittorio
Affiliation:
National Nanotechnology Laboratory of INFM (NNL-INFM), Dipartimento di Ingegneria dell' Innovazione, Università di Lecce, Via Arnesano, 73100 Lecce (ITALY). E-mail: mariateresa.todaro@unile.it
A. Passaseo
Affiliation:
National Nanotechnology Laboratory of INFM (NNL-INFM), Dipartimento di Ingegneria dell' Innovazione, Università di Lecce, Via Arnesano, 73100 Lecce (ITALY). E-mail: mariateresa.todaro@unile.it
R. Cingolani
Affiliation:
National Nanotechnology Laboratory of INFM (NNL-INFM), Dipartimento di Ingegneria dell' Innovazione, Università di Lecce, Via Arnesano, 73100 Lecce (ITALY). E-mail: mariateresa.todaro@unile.it
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Abstract

We investigate the optical properties of InGaAs QDs emitting at 1330 nm, directly grown by Metal Organic Chemical Vapor Deposition (MOCVD) in a GaAs matrix, without indium in the barrier. The PL characterization of this new kind of QDs, shows very narrow lineshape at room temperature and a strong reduction of the temperature dependent quenching of the emission (a factor of 3 from 30 K to 300 K).

The quantum external efficiency obtained by inserting such QDs into light emitting diode structures, despite the low dot density (1.6*109 cm−2), is 0.03%. This value corresponds to an individual QD efficiency about 30% higher than that reported in the literature for state of art InGaAs/InGaAs QD LEDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T5.8
Copyright
Copyright © Materials Research Society 2004

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References

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