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Optical Properties of Size-Selected Silicon Clusters: 8 – 12 Å Silicon Clusters Are Amazingly Bulk-Like

Published online by Cambridge University Press:  15 February 2011

K.-D. Rinnen  and
M. L. Mandich
K.-D. Rinnen
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974–0636
M. L. Mandich
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974–0636
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Abstract

Absorption spectra from 0.94 – 5.58 eV are obtained for gas phase neutral silicon clusters Si18 – Si41 using resonant one- and two-color photodissociation spectroscopy. The spectra of all clusters are essentially identical and exhibit six sharp features above 3.0 eV. Comparisons of the silicon cluster spectra to those of various forms of silicon show that they have much in common with the spectrum of bulk diamond lattice crystalline silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 272: Symposium O – Chemical Processes in Inorganic Materials: Metal and Semiconductor Clusters , 1992 , 223
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. See, for example, Chelikowsky, J. and Phillips, J., Phys. Rev. Lett. 63, 1653 (1989); C. Patterson and R. Messmer, Phys. Rev. B 42, 7530 (1990); U. Rothlisberger et al, J. Chem. Phys. 96, 1248 (1992); E. Kaxiras, Phys. Rev. Lett. 64, 551 (1990); K. Raghavachari, Phase Transitions 24–26, 61 (1990); H. Nolte and K. Jug, J. Chem. Phys. 93, 2584 (1990).CrossRefGoogle Scholar
2. Jarrold, M. and Constant, V., Phys. Rev. Lett. 67, 2994 (1991); J. Alford et al, J. Chem. Phys. 94, 2618 (1991).CrossRefGoogle Scholar
3. Kolenbrander, K. and Mandich, M., Phys. Rev. Lett. 65, 2169 (1990).CrossRefGoogle Scholar
4. Rinnen, K. et al, J. Chem. Phys. 96, 4088 (1992); K. Rinnen and M. Mandich, submitted to Phys. Rev. Lett.CrossRefGoogle Scholar
5. Kitsopoulos, T. et al, J. Chem. Phys. 93, 6108 (1990); O. Cheshnovsky et al, Chem. Phys. Lett. 138, 119 (1987); C. Rohlfing and K. Raghavachari, J. Chem. Phys. 96, 2114 (1992).CrossRefGoogle Scholar
6. Properties of Silicon, (INSPEC, NY, 1987).Google Scholar
7. Lautenschlager, P. et al, Phys. Rev. B 36, 4821 (1987).CrossRefGoogle Scholar
8. Wang, Y. and Herron, N., Phys. Rev. B 42, 7253 (1990) and A. Kortan et al, J. Am. Chem. Soc. 112, 1327 (1990) plus references within.CrossRefGoogle Scholar
9. Krishna, M. Rama and Friesncr, R., J. Chem. Phys. 96, 873 (1992); M. Rama Krishna, private communicationCrossRefGoogle Scholar
10. Hanfland, M. et al, Phys. Rev. B 38, 2864 (1989); M. Cohen and J. Chelikowsky, Electronic Structure and Optical Properties of Semiconductors, (Springer-Verlag, NY, 1989).Google Scholar
11. Uhrberg, R. and Hansson, G., Crit. Rev. Solid State Mat. Sci. 17, 133 (1991).CrossRefGoogle Scholar