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Optical Switching and Photoluminescence in Erbium Implanted Vanadium Dioxide Thin Films

Published online by Cambridge University Press:  17 April 2013

Herianto Lim ,
Nikolas Stavrias ,
Jeffrey C. McCallum ,
Robert E. Marvel  and
Richard F. Haglund
Herianto Lim
Affiliation:
School of Physics, University of Melbourne, Parkville, Victoria, Australia.
Nikolas Stavrias
Affiliation:
School of Physics, University of Melbourne, Parkville, Victoria, Australia.
Jeffrey C. McCallum
Affiliation:
School of Physics, University of Melbourne, Parkville, Victoria, Australia.
Robert E. Marvel
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee, U.S.A.
Richard F. Haglund
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee, U.S.A.
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Abstract

Vanadium dioxide (VO2) is a promising material for an optical switch due to the ultrafast and reversible transition between its two phases with contrasting optical, as well as electronic, properties. Meanwhile, erbium (Er3+) has been a standard optical amplifier for the current fiber-optic communication system. Hence, a combination of the two could be expected to make an optical switch capable of simultaneous optical amplification. In the present work, the optical switching and photoluminescence of Er-implanted VO2 were successfully demonstrated. Post-implantation annealing at 800°C or above was seen crucial for the activation of the Er centers in the VO2 crystals.

Keywords

Erion-implantationmetal-insulator transition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1577: Symposium XX – Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies , 2013 , mrss13-1577-xx03-37
Copyright
Copyright © Materials Research Society 2013

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