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Orientation-Dependent Sulfide Passivation of Indium Arsenide

Published online by Cambridge University Press:  21 February 2011

E.E. Novikov  and
E.E. Chaikina
E.E. Novikov
Affiliation:
A.F.Ioffe Physico-Teohnioal Institute, 26 Politekhnioheskaya st, 194021 St.Petersburg, Russia
E.E. Chaikina
Affiliation:
A.F.Ioffe Physico-Teohnioal Institute, 26 Politekhnioheskaya st, 194021 St.Petersburg, Russia
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Abstract

The effect of sulfide passivatlon on the photoluminescence properties of InAs relative to the surface orientation has been investlgated. Chemical bonds formed in the passivation process have been studied using X-ray photoelectron spectroscopy. It was found that both As-S and In-S bonds form at the (111)A face, whereas only As-S bonds form at the (111 )B face. Improvement of photoluminescence properties was found to be associated with a decrease in the surface content of the oxides and elemental arsenic. Sulfidizing results in a reduction of the surface state density by an order of magnitude.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 189
Copyright
Copyright © Materials Research Society 1993

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References

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