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Passivation of InGaAs/InP heterostructures

Published online by Cambridge University Press:  10 February 2011

R. Driad ,
Z. H. Lu ,
W. R. McKinnon ,
S. Laframboise ,
S. P. McAlister ,
P. J. Poole ,
S. Raymond  and
S. Charbonneau
R. Driad
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada KIA 0R6.
Z. H. Lu
Affiliation:
Department of Materials Science, University of Toronto, Toronto, Canada M5S 3E4.
W. R. McKinnon
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada KIA 0R6.
S. Laframboise
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada KIA 0R6.
S. P. McAlister
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada KIA 0R6.
P. J. Poole
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada KIA 0R6.
S. Raymond
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada KIA 0R6.
S. Charbonneau
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada KIA 0R6.
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Abstract

In this study we report different surface treatments and device designs that can be used to improve the performance of InGaAs/InP heterostructure devices. The surface properties of InGaAs (100) after sulfur or UV-ozone passivation were investigated by photoluminescence and high energy-resolution X-ray photoelectron spectroscopy. The base leakage current and the dc current gain of InGaAs/InP heterostructure bipolar transistors (HBTs) have been used to evaluate the efficiency of the passivation treatments. Although these treatments successfully passivated large area HBTs, the improved device characteristics degraded after a dielectric was deposited by plasma enhanced chemical vapor deposition (PECVD) or even just with time. Nevertheless, we found a combined surface treatment that is successful even under PECVD deposition – a UV-ozone treatment that produces a sacrificial oxide that is then removed by HF. This approach will be contrasted with a different method based on an optimized HBT layer structure with a thin InP emitter. In this case, the thin layer of depleted InP from the emitter left on the extrinsic base passivates the surface, and no treatment is required.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 227
Copyright
Copyright © Materials Research Society 1999

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References

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