Hostname: page-component-6bf8c574d5-mggfc Total loading time: 0 Render date: 2025-02-22T16:58:38.855Z Has data issue: false hasContentIssue false
  • English
  • Français

PbEuTe/PbTe Multi-Quantum Wells: Structural and Optical Properties

Published online by Cambridge University Press:  10 February 2011

E. Abramof ,
P.H.O. Rappl ,
A.Y. Ueta ,
P. Motisuke  and
S.O. Ferreira
E. Abramof
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 São José dos Campos, BRAZIL. E-mail: abramof@las.inpe.br
P.H.O. Rappl
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 São José dos Campos, BRAZIL
A.Y. Ueta
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 São José dos Campos, BRAZIL
P. Motisuke
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 São José dos Campos, BRAZIL
S.O. Ferreira
Affiliation:
Depto de Fisica, Universidade Federal de Viçosa, Viçosa-MG, BRAZIL
Get access

Abstract

A series of Pb1−xEuxTe/PbTe multi-quantum well (MQW) samples were grown on (111) cleaved BaF2substrates by molecular beam epitaxy. The Eu content was maintained at x∼0.06 and the PbTe well width was varied from 50 to 200 Å. The co/2Θ scans of the (222) Bragg reflection showed very well resolved satellite peaks for all samples indicating that sharp interfaces were obtained. The strain inside the MQW structure was obtained as a function of the PbTe well width by fitting the ω/2Θ scans to the ones calculated by dynamical theory of x-ray diffraction. The transition energies between the confined states in the conduction and valence bands of the PbTe well were determined through the infrared transmission measurement analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 339
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Partin, D.L., IEEE J. Quantum Electron. QE-24, 1716 (1988) and references therein.Google Scholar
2 Bauer, G., Kriechbaum, M., Shi, Z., and Tacke, M., Nonlin, J.. Opt. Phys. Mater 4, 283 (1995).Google Scholar
3 Using the energy gap dependence of PblxEuxTe published in Yuan, S., Krenn, H., Springholz, G., Ueta, A.Y., Bauer, G., and McCann, P.J., Phys. Rev B 55, 4607 (1997).Google Scholar
4 Rappl, P.H.O., Closs, H., Ferreira, S.O., Abramof, E., Boschetti, C., Motisuke, P., Ueta, A.Y., and Bandeira, I. N., J. Cryst. Growth 191, 466 (1998).Google Scholar
5 Ferreira, S.O., Abramof, E., Rappl, P.H.O., Ueta, A.Y., Closs, H., Boschetti, C., Motisuke, P., and Bandeira, I.N., J. Appl. Phys. 84, 3650 (1998).Google Scholar
6 Bartels, W.J., Honstra, J., Lobeek, D.J.W., Acta Crystallogr. Sec. A 42, 539 (1986).Google Scholar
7 Yuan, S., Springholz, G., Bauer, G., and Kriechbaum, H., Phys. Rev. B 49, 5476 (1994).Google Scholar
8 Yuan, S., Krenn, H., Springholz, G., Bauer, G., and Kriechbaum, H., Appl Phys. Lett. 62, 885 (1993).Google Scholar