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Phosphorus and Boron Doping of Silicon Thin Films Using ArF Excimer Laser

Published online by Cambridge University Press:  25 February 2011

A. Slaoui ,
M. Elliq ,
H. Pattyn ,
E. Fogarassy ,
S. De Unamuno  and
R. Stuck
A. Slaoui
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
M. Elliq
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
H. Pattyn
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
E. Fogarassy
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
S. De Unamuno
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
R. Stuck
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
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Abstract

This work describes phosphorus (P) and boron (B) doping of polysilicon filns deposited on quartz. Doping is achieved by means of a pulsed ArF excimer laser to melt a controlled thickness of amorphous or polycristalline silicon film coated with a spinon silicate glass (SOG) film containing the dopant (P or B). We have investigated the influence of doping parameters such as laser fluence, number of shots and dopant film thickness on the sheet resistance and the incorporation rate. From these results, we have shown that high doped, shallow junctions presenting sheet resistance lower than 5 kΩ/∠ can be obtained. Poly-Si TFT's with good electrical characteristics were successfully fabricated using this doping technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 389
Copyright
Copyright © Materials Research Society 1992

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References

1. Murakami, K., Eryn, O., Takita, K. and Masuda, K., Phys. Rev. Lett., 59, 2203 (1987)CrossRefGoogle Scholar
2. Bruines, J.J.P., Hal, R.M.P. Van, Boots, H.NI.J., Polman, A. and Saris, F.W., Appl. Phys. Lett., 49, 1160 (1986)Google Scholar
3. Roorda, S. and Sinke, W.C.. Appl. Surf. Sci., 36, 588 (1989)Google Scholar
4. Maillou, J.G., Math, E.L., Desover, J.C., Unamuno, S. De and Fogarassy, E., Appl. Surface Sci. 43 150 (1989)Google Scholar
5. Sameshinia, T., Hara, M. and Usui, S., Jap. J. Appl. Phys., 28(10), 1789 (1989)Google Scholar
6. Sera, K., Okumura, F., Uchida, H., Itoh, S., Kancko, S. and Hotta, K.. IEEE Trans. Electron. Dev., 36(2), 2868 (1989)Google Scholar
7. Shirai, S. and Serikawa, S.. Ext. Abstract of 22nd SSDM Conf., Sendai. p. 979 (1990)Google Scholar
8. Kawachi, G., Ayama, T., Suzuki, T., Mimura, A., Ohno, Y., Konishi, N. and Mochizuki, Y.. Ext. Abstract, of 22nd SSDM Conf., Sendai, p. 971 (1990)Google Scholar
9. Coxon, P., Lloyd, M. and Migliorato, P., Appl. Phys. Lett., 48(26), 1785 (1986)Google Scholar
10. Sera, K., Okumura, F., Kaneko, S., Itoh, S., Hotta, K. and Hoshino, H.. J. Appl. Phlys. 67 2359 (1990)Google Scholar
11. Sameshima, T., Usui, S. and Sekiya, M.. J. Appl. Phys. 62, 711 (1987)Google Scholar
12. Adachi, S., J. Appl. Phys. 70(4), 2304 (1991)Google Scholar
13. Fogarassy, E., Stuck, R., Hodeau, M., Wattiaux, A., Toulemonde, M. and Siffert, P.. in Proc. Photovoltaic Solar Energy Conf. III, Cannes, France, 1980, ed. by Palz, W. (Reidel Publ. Comp., Dordrecht 1981) p. 639 Google Scholar
14. Slaoui, A., Hartiti, B., Muller, J.C., Loghmarti, M., Stuck, R. and Siffert, P., Mat. Res. Soc. Symp. Proc. Vol. 224, Anaheim. 1991.Google Scholar
15. Sanchez, G., Castano, J.L., Garrido, J., Martinez, J. ans Piqueras, J., J. Electrochem. Soc., 138(10), 3039 (1991)Google Scholar
16. Elliq, M., Foragassy, E., Stoquert, J.P., Fuchs, C., Unamuno, S. de, Prevot, B. and Pattyn, H., Appl. Surf. Sci., 46, 378 (1990)Google Scholar
17. Slaoui, A., Foulon, F. and Siffert, P., J. Appl. Phys., 67, 6197 (1990)Google Scholar
18. Shashkov, Y.M. and Gurevich, W.M., Russ. J. Phys. Chem., 42, 1082 (1968)Google Scholar
19. Elliq, M., Slaoui, A., Fogarassy, E., Pattyn, H., Stuck, R. and Siffert, P., Mat. Res. Soc. Symp. Proc. Vol. 219, Anaheim, 1991.Google Scholar
20. Bentini, G.G., Bianconi, M., Correra, L., Nipoti, R., Summonte, C., Cohen, C. and Siejka, J.. E-MRS meeting 15, 273 (Les éditions de Physique, Paris, 1987)Google Scholar
21. Unamuno, S. de and Fogarassy, E.. Appl. Surf. Sci., 36 1 (1989)Google Scholar
22. Pattyn, H.. extended abstract of 22nd SSDM Conf., 1990 Google Scholar
23. Kobayashi, K., Nijs, J. and Mertens, R., J. Appl. Phys., 65, 2541 (1989)Google Scholar