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Photoconduction in Thin-Film Transistors Fabricated from Lasercrystallized Silicon on Fused Quartz

Published online by Cambridge University Press:  28 February 2011

A. Chiang ,
M. H. Zarzycki  and
N. M. Johnson
A. Chiang
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
M. H. Zarzycki
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Photoconduction with optical gain in excess of 3000 is achieved in depletion-mode MOSFETs fabricated from laser-crystallized silicon thin-films on fused quartz. Devices operated with a reverse gate bias show responsivity of ≥ 300 Amp/Watt for radiation in the visible spectrum and dynamic range of > 106. This process occurs by spatial separation of photogenerated electron-hole pairs across a p-n junction in the device body, collection of holes in the floating substrate, and conduction of electrons in a buried channel in the bulk of the nearly defect-free silicon film. This study explores the influence of channel dopant profile on the photoconduction process and the latitude for optimized photodetector performance. The effect of post-crystallization residual structural defects on performance uniformity is also evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 401
Copyright
Copyright © Materials Research Society 1986

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References

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