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Photoconductivity Study of CrB and CrI in Silicon

Published online by Cambridge University Press:  25 February 2011

A. Schlette ,
R. Klenle ,
A. Dörnen ,
W. Kürner  and
K. Thonke
A. Schlette
Affiliation:
Universität Stuttgart, 4. Phys. Institut, Pfaffenwaldring 57, D 7000 Stuttgart 80
R. Klenle
Affiliation:
Universität Stuttgart, 4. Phys. Institut, Pfaffenwaldring 57, D 7000 Stuttgart 80
A. Dörnen
Affiliation:
Universität Stuttgart, 4. Phys. Institut, Pfaffenwaldring 57, D 7000 Stuttgart 80
W. Kürner
Affiliation:
Universität Stuttgart, 4. Phys. Institut, Pfaffenwaldring 57, D 7000 Stuttgart 80
K. Thonke
Affiliation:
Universität Stuttgart, 4. Phys. Institut, Pfaffenwaldring 57, D 7000 Stuttgart 80
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Abstract

We observe in photoconductivity (PC) measurements EMT-like excited states of the pseudodonor CrB, which are responsible for the capture of free electrons due to their short lifetime. The energetic position of the ground state can be located at Ev + (292 ± 5) meV. A finestructure of the (CrB)° transition consisting of at least 15 components is observed in PC and high-resolution Fourier transform photoluminescence. In acceptor-free silicon a step in photoconductivity at 205 ± 10 meV is ascribed to interstitial Cr, whereas a second step at ~ 425 meV could be due to substitutional Cr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 239
Copyright
Copyright © Materials Research Society 1990

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References

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