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Photoquenching of “Defect Related” Luminescence in Amorphous Si:H

Published online by Cambridge University Press:  26 February 2011

P. K. Bhat  and
T. M. Searle
P. K. Bhat
Affiliation:
Department of Physics, The University, Sheffield, England S3 7RH
T. M. Searle
Affiliation:
Present address: Glasstech Solar, Inc., (GSI), 12441 West 49th Avenue, Wheatridge, CO 80033, U.S.A.
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Abstract

We report for the first time the photo-quenching of defect related photoluminescence emission from amorphous Si:H. There is no shift in the position of the emission peak, although the magnitude of photoquenching depends on the material, through the density of the states of the gap. Photoenhancement is not observed, even when the band tail emission is increasing, suggesting a new recombination mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 135
Copyright
Copyright © Materials Research Society 1988

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