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Picosecond Time-Resolved Detection of Plasma Formation and Phase Transitions in Silicon

Published online by Cambridge University Press:  15 February 2011

J. M. Liu ,
H. Kurz  and
N. Bloembergen
J. M. Liu
Affiliation:
Gordon McKay Laboratory, Division of Applied sciences, Harvard University, Cambridge, Massachusetts 02138, USA
H. Kurz
Affiliation:
Gordon McKay Laboratory, Division of Applied sciences, Harvard University, Cambridge, Massachusetts 02138, USA
N. Bloembergen
Affiliation:
Gordon McKay Laboratory, Division of Applied sciences, Harvard University, Cambridge, Massachusetts 02138, USA
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Abstract

Picosecond time-resolved reflectivity and transmission changes of bulk silicon and silicon-on-sapphire have been measured to study the electron-hole plasma formation and phase transitions in silicon, induced by picosecond green or ultraviolet pulses. The results provide direct evidence of ultrafast energy transfer to the lattice and ultrafast phase transitions in silicon. Lattice heating up to the melting point and overheating of the melt or boiling have been observed during the picosecond pulse duration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 3
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Present address: Department of Electrical and Computer Engineering, SUNY at Buffalo, Amherst, New York 14260, USA

References

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