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Pinning of Misfit Dislocations in film Growth Studied by Grazing Incidence X-ray Scattering

Published online by Cambridge University Press:  21 February 2011

K. S. Liang  and
C. H. Lee
K. S. Liang
Affiliation:
Exxon Research and Engineering Company, Corporate Research Laboratories, Annandale, NJ 08801
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Abstract

Using grazing incidence x-ray scattering, we have studied incommensurate structures of Pb adlayers on Cu(110) surface and epitaxial Al films grown on Si(111) surface. Similar diffuse scattering profiles were found in both cases, which can be fitted with a Gaussian-plus-Lorentzian lineshape. The results are attributed to a overlayer structure with pinned misfit dislocations at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 375
Copyright
Copyright © Materials Research Society 1992

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References

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