Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-01-15T06:59:14.163Z Has data issue: false hasContentIssue false
  • English
  • Français

Planar Waveguides Formation Process in Linbo3 by Ti IN-Diffusion and H-Li Ion Exchange: A Structural Study(o)

Published online by Cambridge University Press:  21 February 2011

C. CANALI ,
A. CARNERA ,
G. CELOTTI ,
G. DELLA MEA  and
P. MAZZOLDI
C. CANALI
Affiliation:
Istituto di Elettrotecnica ed Elettronica, Via Gradenigo 6/A, Padova, Italy
A. CARNERA
Affiliation:
Dipartimento di Fisica, Via Marzolo 8, Padova, Italy
G. CELOTTI
Affiliation:
Istituto La.M.El. C.N.R., Via Castagnoli 1, Bologna, Italy
G. DELLA MEA
Affiliation:
Dipartimento di Fisica, Via Marzolo 8, Padova, Italy
P. MAZZOLDI
Affiliation:
Dipartimento di Fisica, Via Marzolo 8, Padova, Italy
Get access

Abstract

The interactions and compounds formed between Ti and LiNbO3, occurring before the true Ti in-diffusion process for optical wa veguides production,have been studied by using different analysis techniques.The relationship between lattice modifications and H concentration profile in proton exchanged LiNbO3 waveguides are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 24: Symposium B – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1983 , 459
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

(o)

Work supported by Ministero della Pubblica Istruzione research funds.

References

REFERENCES

1. Kogelnic, H., Proc.IEEE 69, 232 (1981).CrossRefGoogle Scholar
2. Tsai, C.S., IEEE Trans.Circuits Syst. CAS-26, 1072 (1979).CrossRefGoogle Scholar
3. Burns, W.K., Klein, P.H., West, E.J. and Plew, L.E., J.Appl.Phys. 50, 6175 (1979).CrossRefGoogle Scholar
4. Stultz, L.W., Appl.Opt. 18, 2041 (1979).CrossRefGoogle Scholar
5. Branoski, M.K., Chen, B.U., Joseph, T.S., Lee, Y.Y.M. and Ramer, O.G., IEEE Trans. Circuit Syst.CAS-26, 1113 (1979).CrossRefGoogle Scholar
6. Jackel, J.J., Rice, C.E. and Veselka, J.S., Appl.Phys.Lett. 41, 607 (1982).CrossRefGoogle Scholar
7. Wong, K.K., De La Rue ans, R.M. Wright, S., Optics Lett. 7, 546 (1983).CrossRefGoogle Scholar
8. De Micheli, M., Botineau, J., Neven, S., Sibillot, P., Ostrowsky, D.B. and Papuichon, M., Optics Lett. 8, 116 (1983).CrossRefGoogle Scholar
9. Armenise, M.N., Canali, C., De Sario, M., Carnera, A., Mazzoldi, P. and Ce lotti, G., IEEE Trans. Components Hybrids Manuf. Techn. CHMT-5, 212 (1982),CrossRefGoogle Scholar
9a. J. Appl.Phys. 54, 62 (1983).CrossRefGoogle Scholar
10. Canali, C., Carnera, A., Della Mea, G., De La Rue, R.M., Nutt, A.C.G. and Tobin, J.R., II European Conf Integrated Optics 17-18 October 1983, Post- Deadline Papers.Google Scholar
11. Noda, J., Uchida, N., Saito, S., Saku, T. and Minaka, M., Appl.Phys.Lett. 27, 19 (1975).CrossRefGoogle Scholar
12. Holman, R.L., Cressman, P.J. and Anderson, J.A. Ferroelectrics 27, 19 (1975).Google Scholar
13. Jackel, J.L., Opt.Commun. 3, 82 (1982).Google Scholar
14. Fukuma, M., Noda, J. and Iwasaki, H., J. Appl.Phys. 49, 3693 (1978).CrossRefGoogle Scholar
15. Wood, Van E., Hartman, N.F., Austin, A.E. and Verber, C.M., J. Appl. Phys. 52, 1118 (1981).CrossRefGoogle Scholar
16. Jackel, J.L., Ramaswamy, V. and Lyman, S.P., Appl. Phys.Lett. 38, 509(1981).CrossRefGoogle Scholar
17. Gonzalez, R., Chen, Y., Tsang, K.L. and Summers, G.P., Appl.Phys.Lett. 41, 739 (1982).CrossRefGoogle Scholar
18. Jackel, J.L., Rice, C.E. and Vaselka, J.J., Electr.Lett. 19, 387 (1983).CrossRefGoogle Scholar
19. Lanford, W.A., Trautvetter, H.B., Ziegler, J.F. and Keller, Y., Appl.Phys. Lett. 28, 566 (1976).CrossRefGoogle Scholar