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Plasma Parameter and Film Quality in the ECR-Plasma-CVD

Published online by Cambridge University Press:  21 February 2011

Y. Nakayama ,
M. Kondoh ,
K. Hitsuishi  and
T. Kawamura
Y. Nakayama
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, Japan
M. Kondoh
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, Japan
K. Hitsuishi
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, Japan
T. Kawamura
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, Japan
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Abstract

New DC bias method for the electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) is demonstrated, where the highly photosensitive a-Si:H film of the device grade is deposited on the dielectric substrate. The measurement of plasma parameters using a probe technique indicates that the impinging of ion H+ on the growing surface is the key to the high quality a-Si:H film and this DC bias method controls the film properties by the ion density rather than the ion energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 261
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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4) Nakayama, Y., Kondoh, M., Hitsuishi, K. and Kawamura, T., submitted to Appl. Phys. Lett.Google Scholar