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Plasma Post-Hydrogenation of Hydrogenated Amorphous Silicon and Germanium

Published online by Cambridge University Press:  10 February 2011

W. Beyer  and
U. Zastrow
W. Beyer
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany.
U. Zastrow
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany.
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Abstract

Incorporation and kinetics of hydrogen during plasma post-hydrogenation and thermal treatment are discussed for a-Si:H and a-Ge:H films. For material of low hydrogen content, the hydrogen surface concentration reached by plasma treatment equals the hydrogen concentration obtained by deposition at the same temperature and under similar plasma conditions. Enhancements of the hydrogen diffusion coefficient and of hydrogen solubility observed for plasma treatment at temperatures ≤400°C and ≤300°C for a-Si:H and a-Ge:H, respectively, are attributed to a plasma induced rise of the surface hydrogen chemical potential.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 497
Copyright
Copyright © Materials Research Society 1996

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