Hostname: page-component-6bf8c574d5-mggfc Total loading time: 0 Render date: 2025-02-22T16:04:51.529Z Has data issue: false hasContentIssue false
  • English
  • Français

Point Defects in Doped and Undoped Hgl−xCdxTe Alloys*

Published online by Cambridge University Press:  15 February 2011

H. R. Vydyanath
H. R. Vydyanath*
Affiliation:
Honeywell Inc., Electro-Optics Operations, 2 Forbes Road, Lexington, Massachusetts 02173
Get access

Extended abstract

Using a law of mass action approach in which lattice defects are treated as chemical species, the variation of the defect concentrations as a function of .the physicochemical conditions of preparation has been established via measurements of electrical characteristics which are directly related to the defect concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 9 , 1981 , 437
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Long, D. and Schmit, J. L., “Semiconductors and Semimetals,” Volume 5, (Willardson and Beer Eds.), p. 234, Academic Press, New York, (1970).Google Scholar
2.Dornahaus, R. and Nimetz, G., Solid State Physics, Volume 78, Springer-Verlag, New York (1976).Google Scholar
3.Farrar, R. A., Gilhm, G. J., Bartlet, R. and Quelch, M., Journal of Mat. Sci 12, 836 (1977).Google Scholar
4.Brebrick, R. F. and Schwartz, J. P., Journal of Electronic Materials 9, 485 (1980).Google Scholar
5.Vydyanath, H. R., “Defect Chemistry and Characterization of (Hg,Cd)Te”, Semi-Annual Technical Report to NASA, George C. Marshall Space Flight Center, Alabama, Under Contract NAS8-33245, June 1980 (Unpublished).Google Scholar
6.Vydyanath, H. R., “Lattice Defects in Hgl−xCdxTe Alloys,” I-Defect Structure of Undoped and Copper Doped Hg.8 Cd.2 Te, Journal of Electrochemical Society, December 1981.Google Scholar
7.Vydyanath, H. R., Donovan, J. C. and Nelson, D. A., “Lattice Defects in Hgl−xCdxTe Alloys,” III-Defect Structure of Undoped Hg.6 Cd.4 Te, Journal of Electrochemical Society, December 1981.Google Scholar
8.Vydyanath, H. R., “Lattice Defect Studies in Hgl−xCdxTe Alloys,” II-Defect Structure of Indium Doped Hg.8 Cd.2 Te,” Journal of Electrochemical Society, December 1981.Google Scholar
9.Vydyanath, H. R. and Kroger, F. A., “Doping Behavior of Iodine in Hg.8Cd.2 Te” Journal of Electronic Materials, January 1982,Google Scholar
10.Vydyanath, H. R. and Abbott, R. C., “Phosphorus as an Amphortenic Dopant in Hg.8Cd.2Te,” (In Preparation).Google Scholar