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The Poly-Si Tfts Fabricated by Novel Oxidation Method with Intermediate Oxide

Published online by Cambridge University Press:  10 February 2011

C-M Park ,
J-S Yoo ,
B-H Min  and
M-K Han
C-M Park
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
J-S Yoo
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
B-H Min
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
M-K Han
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
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Abstract

We have fabricated a poly-Si TFT using a novel oxidation method, which improves the surface roughness at the interface between the poly-Si layer and the gate oxide layer. Compared with the poly-Si TFTs fabricated by the conventional oxidation method, the proposed poly-Si TFT exhibits the remarkable enhancement of the electrical parameters, such as the subthreshold swing and the threshold voltage. It is observed that the proposed poly-Si TFT has a higher dielectric strength and the device characteristics are not degraded significantly after an electrical stress. The improvement of the surface roughness at oxide/poly-Si interface is found to be critical to enhance the device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 183
Copyright
Copyright © Materials Research Society 1997

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