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Porous Amorphous Si Formation by the Etching of Single Crystal Si Substrates

Published online by Cambridge University Press:  25 February 2011

T. George ,
R. P. Vasquez ,
S. S. Kim ,
R.W. Fathauer  and
W. T. Pike
T. George
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
R. P. Vasquez
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
S. S. Kim
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
R.W. Fathauer
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
W. T. Pike
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
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Abstract

The nature of light-emitting porous Si layers produced by non-anodic stain etching of p-type (100) Si substrates is studied. The layers were characterized by transmission electron microscopy as being amorphous in nature. X-ray photoelectron spectroscopy and electron spin resonance measurements show these layers to be composed mainly of a-Si. The formation mechanism of the a-Si is explored using by stain etching SiGe ‘marker’ layers within epitaxially grown Si films and by high temperature annealing. These experiments provide strong evidence for a spontaneous crystalline-amorphous phase transformation during the etching process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 415
Copyright
Copyright © Materials Research Society 1992

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References

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