Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-15T01:06:54.639Z Has data issue: false hasContentIssue false
  • English
  • Français

Precise characterization of ultrathin nitride/oxide gate dielectrics by grazing x-ray reflectance and spectroscopic ellipsometry

Published online by Cambridge University Press:  10 February 2011

Pierre Boher ,
Jean Philippe Piel  and
Jean Louis Stehle
Pierre Boher
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 BOIS COLOMBES, France.
Jean Philippe Piel
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 BOIS COLOMBES, France.
Jean Louis Stehle
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 BOIS COLOMBES, France.
Get access

Abstract

Precise characterization of nitride/oxide gate structures becomes a challenging task due to the very thin thickness (<3-4nm), which will be needed in the next generation integrated circuits. Conventional techniques such as spectroscopic ellipsometry in the visible range becomes difficult to apply because of the great correlation between thickness and optical indices. To overcome this problem the following strategy is applied. First, grazing x-ray reflectance is used on all the samples to extract the different layer thicknesses using a simple model. Second, spectroscopi ellipsometry from deep UV 190nm to 850nm is applied and the results fitted with the structural models deduced from the x-ray results. In this conditions the nitrogen content of the films can be precisely determined. This kind of analysis has been made on a series of nitride/oxide gate structures with variable thicknesses and degree of nitridation. Regression results are discussed and compared to x-ray photoemission results obtained on the same samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 63
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. The National Technology Roadmap for Semiconductor technology Needs, 1997 Edition, SIA.Google Scholar
2.Kobayashi, K., J. Electrochem. Soc., vol. 139, N°5, p. 1693 (1992)Google Scholar
3.Han, L.K., IEEE Electron device letters, vol. 16, N°8, p. 348 (1995)Google Scholar
4.Lo, G.Q., IEEE Electron device letters, vol. 13, N°7 (1992)Google Scholar
5.Mazumder, M.K., J. Electrochem. Soc. Vol. 143, N°1, p. 368 (1996)Google Scholar
6.Pickering, C., Future Fab International, N°5, p. 351 (1997)Google Scholar
7.Boher, P., Houdy, P., Schiller, C., J. Appl. Physics, 68, p. 6133 (1990)Google Scholar
8.Bridou, F., Pardo, B., J. of x-ray Science and Techn., 4, pp. 200–216 (1994)Google Scholar
9.Boher, P., Stehle, J.L., Phys. Stat. Sol., 170, pp. 211–220 (1998)Google Scholar
10.Stommer, R., Gobel, H., Hub, W., Pietsch, U., Semiconductor International, May, pp. 81–88 (1998)Google Scholar
11.Bruggeman, A.G., Ann. Phys. (Liepzig), 24, 636 (1935)Google Scholar