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Preparation and Patterning of GaSb Surfaces with Br-IBAE for Antimonide Based Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

S.R. Vangala ,
B. Krejca ,
K. Krishnaswami ,
H. Dauplaise ,
X. Qian ,
B. Zhu ,
M. Ospina ,
C. Sung ,
K. Vaccaro  and
D. Bliss
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S.R. Vangala
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
B. Krejca
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
K. Krishnaswami
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
H. Dauplaise
Affiliation:
Air Force Research Laboratory/SNHC, Hanscom AFB, MA 01731, USA
X. Qian
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
B. Zhu
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
M. Ospina
Affiliation:
Center for Advance Materials, University of Massachusetts, Lowell, MA 01854, USA
C. Sung
Affiliation:
Center for Advance Materials, University of Massachusetts, Lowell, MA 01854, USA
K. Vaccaro
Affiliation:
Air Force Research Laboratory/SNHC, Hanscom AFB, MA 01731, USA
D. Bliss
Affiliation:
Air Force Research Laboratory/SNHC, Hanscom AFB, MA 01731, USA
W.D. Goodhue
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
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Abstract

Bromine Ion Beam Assisted Etching (Br-IBAE) is shown to be useful in removing GaSb wafer chemical mechanical polish (CMP) surface and subsurface damage; creating microstructure patterns in GaSb surfaces through stencil, photoresist, and oxides masks; and stabilizing the as-etched GaSb surface with a thin, easily thermally desorbed oxide layer. Thus, the Br-IBAE technique is well suited as a GaSb surface final-polish technique in overgrowth applications that require “epi-ready” GaSb (100) surfaces for molecular beam epitaxy (MBE) as well as applications such as quantum wires and dots that require high-quality GaSb/AlInGaSb MBE overgrowth over patterned GaSb (100) surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R9.2
Copyright
Copyright © Materials Research Society 2004

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References

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