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Preparation and Properties of Polysilsesquioxanes - Polysilsesquioxanes as a Candidate to a Low Dielectrics for Electronic Devices -

Published online by Cambridge University Press:  10 February 2011

Yoshimoto Abe ,
Keiko Kagayama ,
Norihiro Takamura  and
Takahiro Gunji
Yoshimoto Abe
Affiliation:
Department of Industrial Chemistry, Faculty of Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba, 278–8510 Japan, abeyoshi@ci.noda.sut.ac.jp
Keiko Kagayama
Affiliation:
Department of Industrial Chemistry, Faculty of Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba, 278–8510 Japan, abeyoshi@ci.noda.sut.ac.jp
Norihiro Takamura
Affiliation:
Department of Industrial Chemistry, Faculty of Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba, 278–8510 Japan, abeyoshi@ci.noda.sut.ac.jp
Takahiro Gunji
Affiliation:
Department of Industrial Chemistry, Faculty of Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba, 278–8510 Japan, abeyoshi@ci.noda.sut.ac.jp
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Abstract

Polysilsesquioxanes PSSQ as a candidate of coatings for interlayer low dielectric films were synthesized by acid and base catalyzed hydrolytic polycondensation of RSi(OMe)3 (R=methyl, vinyl, 3-methacryloxypropyl). Dip and spin coating of PSSQ on organic and inorganic substrates followed by curing at 100 °C, 400 °C, and 450 °C provided transparent and tough coating films of thickness 2000–9000 A. Polysilsesquioxanes adhered strongly to the substrates to form coating films of which the adhesion strength and hardness were 10 and 9H based on JIS K5400 comparable to ISO standard, as heating time and molecular weight increase. On curing at the elevated temperatures, they provided the films with a very smooth surface and the dielectric constants of 3.2∼3.6 (R=3-methacryloxypropyl), 3.8∼4.0 (R=vinyl), and 2.5∼2.7 (R=methyl) depending on film thickness and molecular weight of PSSQ. The films from PSSQ (R=methyl) were found to be porous compared with those from PSSQ (R=vinyl).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 247
Copyright
Copyright © Materials Research Society 1999

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References

1) Izumi, K., Tanaka, H., Uchida, Y., Tohge, N., and Minami, T., J. Non-Crystal. Solids 147 & 148,483 (1992)10.1016/S0022-3093(05)80663-5Google Scholar
2) Etienne, P., Denape, J., Paris, J. Y., Phalippou, J., and Sempere, R., J. Sol-Gel Sci. & Tech. 6 287 (1993)10.1007/BF00402701Google Scholar
3) Iwashita, K., Tadanaga, K., and Minami, T., J. Apply. Poly. Sci. 61 2173 (1996)10.1002/(SICI)1097-4628(19960919)61:12<2173::AID-APP16>3.0.CO;2-83.0.CO;2-8>Google Scholar
4) Tadanaga, K., Azuta, K., and Minami, T., J. Ceram. Soc. Jpn., 105 555 (1997)10.2109/jcersj.105.555Google Scholar
5) Stamper, A., Proceeding of 3rd International DUMIC Conference, p. 9 (1997);Google Scholar
Kazuo, M., Denshi Zairyo 37, 22–29 (1998);Google Scholar
Furusawa, T., Homma, Y., Shimamura, Y., Morishima, H., Yamamoto, Y., and Satoh, H., Denshi-Jyoho-Tsuushin Gakkai Ronbunshi J78–C–II (5), 193 (1995)Google Scholar
6) Abe, Y., Taguchi, K., Hatano, H., Gunji, T., Nagao, Y., and Misono, T., J. Sol-Gel Sci. & Tech. 2, 131 (1994);10.1007/BF00486226Google Scholar
Abe, Y., Hatano, H., and Gunji, T., J. Polym. Sci.: Part A: Polym. Chem. Ed. 33, pp. 751 (1995);10.1002/pola.1995.080330416Google Scholar
Takamura, N., Taguchi, K., Gunji, T., and Abe, Y., J. Polym. Sci.: Part A: Polym. Chem. Ed. in press.Google Scholar