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Production of Silicon Nanocrystals by Thermal Annealing of Silicon-Oxygen and Silicon-Oxygen-Carbon Alloys: Model Systems for Chemical and Structural Relaxation at Si-SiO2 and Sic-SiO2 Interfaces

Published online by Cambridge University Press:  09 August 2011

Gerald Lucovsky ,
David Wolfe  and
Bruce Hinds
Gerald Lucovsky
Affiliation:
Deptartments of Physics, North Carolina State University, Raleigh, NC 27695-8202 Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202 Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
David Wolfe
Affiliation:
Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
Bruce Hinds
Affiliation:
Deptartments of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

This paper discusses the formation of silicon nanocrystals, nc-Si, by thermal annealing of hydrogenated amorphous thin films of SiOx, x<2 and (Si, C)Ox, x<2. Comparisons are made with SiCx films, providing additional insights into pathways for generation of nc-Si. These alloys are used as model systems for understanding chemical and structural relaxations occurring at Si-SiO2 and SiC-SiO2 interfaces during post-oxidation thermal annealing. This then provides important information for optimized processing of Si-SiO2 and SiC-SiO2 interfaces for device applications.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 111
Copyright
Copyright © Materials Research Society 1999

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