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Propagation of Dislocations Through GeSi/Si Strained Layers and Superlattices

Published online by Cambridge University Press:  28 February 2011

R. Hull ,
J.C. Bean  and
R.E. Leibenguth
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R.E. Leibenguth
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We describe in-situ transmission electron microscope observations of the relaxation of strained layer GeSi/Si epitaxy. Dynamic observations of misfit dislocations in these structures reveal that dislocation nucleation and growth activation barriers, as well as interactions, limit the rate at which strain is relieved. The equivalence of threading and misfit dislocations in this system is demonstrated. Extension of the principles learnt from these single layer experiments to threading dislocation propagation through multilayer structures, enables us to understand the relative inefficiency of GeSi/Si strained layer superlattices in blocking threading dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 505
Copyright
Copyright © Materials Research Society 1988

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References

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