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Properties of Laser Planarized Aluminum Alloy Films

Published online by Cambridge University Press:  25 February 2011

Seshadri Ramaswami  and
Jonathan Smith
Seshadri Ramaswami
Affiliation:
Advanced Micro Devices, Sunnyvale, CA 94086
Jonathan Smith
Affiliation:
Advanced Micro Devices, Sunnyvale, CA 94086
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Abstract

An excimer laser (XeCl, 308 nm) has been used to locally melt and reflow aluminum alloy films into contacts of VLSI device structures resulting in contact filling and local planarization. This technique has the potential to be the answer to the ‘poof’ aluminum step coverage problem. The first order problems are that of ablation and voids. Voids have been categorised as ‘line voids’ and ‘contact voids’. Various processing conditions of the barrier, Al-Si-Cu alloy and Al-Cu alloy metallizations were explored to obtain the optimum process with the desired film characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 579
Copyright
Copyright © Materials Research Society 1990

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References

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