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Proton Irradiation Induced Defects in 611- and 4H-SiC

Published online by Cambridge University Press:  15 February 2011

Werner Puff ,
Adam G. Balogh  and
Peter Mascher
Werner Puff
Affiliation:
Institut für Technische Physik, Technische Universität Graz, Petersgasse 16, A-8010 Graz, Austria, wp@ifk.tu-graz.ac.at
Adam G. Balogh
Affiliation:
FB Materialwissenschaft, FG Dünne Schichten, Technische Hochschule Darmstadt, Petersenstraße 23, 64287 Darmstadt, Germany
Peter Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ont. L8S 4L7, Canada
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Abstract

Annealing of defects in proton irradiated bulk n-type 6H- and semi-insulating 4H-SiC has been investigated by positron lifetime spectroscopy and Doppler-broadening measurements. For the n-type sample radiation induced defects in dependence of the proton fluence were studied. Three or four annealing stages were found, during which the formation of larger defect complexes could be observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 177
Copyright
Copyright © Materials Research Society 1999

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