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Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes

Published online by Cambridge University Press:  18 December 2014

Arjun Shetty ,
Basanta Roul ,
Shruti Mukundan ,
Greeshma Chandan ,
Lokesh Mohan ,
K J Vinoy  and
S B Krupanidhi
Arjun Shetty
Affiliation:
Electrical Communication Engineering, Indian Institute of Science, Bangalore, India
Basanta Roul
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
Shruti Mukundan
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
Greeshma Chandan
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
Lokesh Mohan
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
K J Vinoy
Affiliation:
Electrical Communication Engineering, Indian Institute of Science, Bangalore, India
S B Krupanidhi
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
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Abstract

Gallium nitride (n-type) films of thickness 300nm were grown on c-plane sapphire substrates using plasma assisted molecular beam epitaxy (PA-MBE). High resolution X-ray diffraction and photoluminescence measurements were used to confirm the crystalline and optical qualities of the grown films. Metal-semiconductor Schottky diodes were fabricated using Pt as the Schottky metal and Al as the Ohmic metal contact. Metal-insulator-semiconductor Schottky diodes were also fabricated using HfO2 (10nm) as the insulator material. Diode parameters like barrier height and ideality factor were extracted from I-V measurements. Introduction of HfO2 as the insulator layer leads to better rectifying behavior (forward to reverse current ratio improves from 5.1 to 8.9) with a reduction in reverse leakage current (by 7.4 times), increase in barrier height (from 0.62eV to 0.74eV) and a reduction in ideality factor (from 6 to 4.1) of the Schottky diode.

Keywords

molecular beam epitaxy (MBE)electrical propertiesnitride
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t02-08
Copyright
Copyright © Materials Research Society 2014 

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