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Pulsed Laser Deposition of High-Epsilon Dielectrics: PMN and PMN-PT

Published online by Cambridge University Press:  01 January 1992

K.L. Saenger
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY
R.A. Roy
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY
D.B. Beach
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY
K.F. Etzold
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY
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Abstract

In this study we report on the KrF excimer laser deposition of crystalline films of lead magnesium niobium oxide (PMN) and solid solutions of PMN and lead titanate (PT) in a 65:35 ratio. These materials have potential microelectronic applications as thin film capacitors due to their high dielectric constants (εPMN(bulk) ≥ 10,000). Films were typically deposited in an oxygen background at elevated substrate temperatures(Ts = 525 °C) on substrates of Pt(111)/SiO2/Si or Pt(111)/glass. The deposited films were characterized by Rutherford Backscattering Spectroscopy (RBS), x-ray diffraction, and capacitance/loss measurements. Films prepared from a nearlystoichiometric commercial PMN target were low in Mg and Pb and yielded only the low-c pyrochlore phase (measured εfilm ≃ 100), even after cx-situ annealing at temperatures up to 650°C. Films deposited from Pb,Mg-rich targets prepared by a sol-gel process (tailored to produce the desired film stoichiometry) contained mixtures of perovskite and pyrochlore, with typical r values of order 600–1200.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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