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Quantifying Field-Induced Contrast Effects in Photoelectron Emission Microscopy

Published online by Cambridge University Press:  01 February 2011

K. Siegrist ,
V. W. Ballarotto  and
E. D. Williams
K. Siegrist
Affiliation:
National Institute for Standards and Technology, Gaithersburg, MD 20899
V. W. Ballarotto
Affiliation:
Laboratory for Physical Sciences, 8050 Greenmead Dr, College Park, MD 20740
E. D. Williams
Affiliation:
Laboratory for Physical Sciences, 8050 Greenmead Dr, College Park, MD 20740 Dept. of Physics, University of Maryland, College Park, MD 20742
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Abstract

Samples consisting of electrically isolated titanium lines fabricated on a titanium surface were used to quantify voltage-induced contrast effects in photoelectron emission microscopy (PEEM). Induced contrast effects were observed to extend 6 μm for a -5 V bias applied to a 303 nm tall raised line. We therefore explored, via numerical calculation, the spatial extent of the perturbation to the PEEM accelerating field caused by the bias applied across the step height. The intensity full width at half minimum agreed well with the calculated width defined by the 10% level of lateral field strength. For a line 550 nm tall, a correspondence was found for a calculated width defined by a 5% lateral field strength. It was observed that neighboring structures a few μm away affected the image contrast, for sufficiently strong applied bias. This suggests that effects can easily be induced at distances of 0.5 μm for modest applied voltages, as has been previously observed for structures buried under oxide layers 0.5 μm thick [1].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , GG3.9
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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