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Recessed Gate Processing for GaN/AlGaN-HEMTs

Published online by Cambridge University Press:  01 February 2011

Wilfried Pletschen ,
Rudolf Kiefer ,
Brian Raynor ,
Stefan Mueller ,
Foud Benkhelifa ,
Ruediger Quay ,
Michael Mikulla ,
Michael Schlechtweg  and
Guenter Weimann
Wilfried Pletschen
Affiliation:
wilfried.pletschen@iaf.fraunhofer.de, Fraunhofer Institute of Applied Solid State Physics, TE, TULLASTR. 72, D-79108 FREIBURG, D-79108, Gambia
Rudolf Kiefer
Affiliation:
rudolf.kiefer@iaf.fraunhofer.de, Fraunhofer Institute of Applied Solid State Physics, Freiburg, D-79108, Germany
Brian Raynor
Affiliation:
brian.raynor@iaf.fraunhofer.de, Fraunhofer Institute of Applied Solid State Physics, Freiburg, D-79108, Germany
Stefan Mueller
Affiliation:
stefan.mueller@iaf.fraunhofer.de, Fraunhofer Institute of Applied Solid State Physics, Freiburg, D-79108, Germany
Foud Benkhelifa
Affiliation:
fouad.benkhelifa@iaf.fraunhofer.de, Fraunhofer Institute of Applied Solid State Physics, Freiburg, D-79108, Germany
Ruediger Quay
Affiliation:
ruediger.quay@iaf.fraunhofer.de, Fraunhofer Institute of Applied Solid State Physics, Freiburg, D-79108, Germany
Michael Mikulla
Affiliation:
michael.mikulla@iaf.fraunhofer.de, Fraunhofer Institute of Applied Solid State Physics, Freiburg, D-79108, Germany
Michael Schlechtweg
Affiliation:
michael.schlechtweg@iaf.fraunhofer.de, Fraunhofer Institute of Applied Solid State Physics, Freiburg, D-79108, Germany
Guenter Weimann
Affiliation:
guenter.weimann@iaf.fraunhofer.de, Fraunhofer Institute of Applied Solid State Physics, Freiburg, D-79108, Germany
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Abstract

A dry etch process based on Cl2/SF6 has been developed to selectively remove GaN over AlGaN for the fabrication of recessed gate GaN/AlGaN HEMTs. Using this etching process recessed and non-recessed FETs were fabricated side by side on the same wafer to provide a fair comparision of data. Recessed gate FETs with a gatelength of 0.15μm show cutoff frequencies of 83 and more than 200 GHz for fT and fmax, respectively. Furthermore, gate-drain breakdown as high as 84V has been obtained which is more than twice as much compared to their non-recessed counterparts.

Keywords

nitridedevicesreactive ion etching
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-49
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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