Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-02-05T21:19:20.021Z Has data issue: false hasContentIssue false
  • English
  • Français

Recombination at Dangling-Bonds and Fermi Level Effects on Steady-State Photoconductivity and Light-Induced ESR in a-Si:H

Published online by Cambridge University Press:  25 February 2011

E. Morgado
E. Morgado*
Affiliation:
Centre de Física Molecular das Universidades de Lisboa (INIC), Instituto Superior Técnico, Av. Rovisco Pais, Complexo I - IST, 1000 Lisboa, Portugal
Get access

Abstract

A simple recombination model is proposed in order to explain Fermi level effects on steady-state photoconductivity in a-Si:H. The model assumes positively correlated dangling-bonds as the only localized states in the gap and takes into account the occupation statistics of correlated defect centers in the dark and under illumination. The steady-state photoconductivity and its dependence on the light intensity are investigated as a function of the Fermi level position in the gap. The results show a good agreement with experimental data from undoped, phosphorus and boron doped a-Si:H material. The quenching of the g≈2.0055 Electron Spin Resonance signal upon illumination in undoped samples and its enhancement in doped ones are also reproduced by the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 763
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Street, R.A. and Mott, N.F., Phys. Rev. Lett. 35 (1293) 1975 Google Scholar
[2] Anderson, P.W., Phys. Rev. Lett. 34 (953) 1975 Google Scholar
[3] Street, R.A. and Biegelsen, D.K., J. Non-Cryst. Solids 35/36 (1980) 651 Google Scholar
[4] Dersch, H., Stuke, J. and Beichler, J., Phys. Status Solidi (b) 105 (265) 1981 Google Scholar
[5] Anderson, D.A. and Spear, W.E., Phil. Mag. 36 (695) 1977 Google Scholar
[6] Rehm, W., Fischer, R., Stuke, J. and Wagner, H., Phys. Status Solidi (b) 79 (539) 1977 Google Scholar
[7] Vanier, P.E., Delahoy, A.E. and Griffith, R.W., J. Appl. Phys. 52 (5235) 1981 Google Scholar
[8] Hoheisel, B., Fischer, R. and Stuke, J., J. Physique (Paris) 42 (1981) C4–819 Google Scholar
[9] Jousse, D., Chaussat, C., Vaillant, F., Bruyère, J.-C. and Lesimple, F., J. Non-Cryst. Solids 77/78 (1985) 627 Google Scholar
[10] Shockley, W. and Read, W.T., Phys. Rev. 87 (835) 1952 Google Scholar
[11] Sah, C.T. and Shockley, W., Phys. Rev. 109 (1103) 1958 Google Scholar
[12] Okamoto, H. and Hamakawa, Y., Solid State Commun. 24 (23) 1977 Google Scholar
[13] Vaillant, F. and Jousse, D., Phys. Rev. B 34 (4088) 1986 Google Scholar
[14] Moustakas, T.D., Wronsky, C.R. and Tiedje, T., Appl. Phys. Lett. 39 (721) 1981 Google Scholar
[15] Street, R.A., Appl. Phys. Lett. 41 (1060) 1982 Google Scholar
[16] Abeles, B., Wronsky, C.R., Goldstein, Y. and Cody, G.D., Solid State Commun. 41 (251) 1982 Google Scholar
[17] Street, R.A., Zesch, J. and Thompson, M.J., Appl. Phys. Lett. 43 (672) 1983 Google Scholar
[18] Le Comber, P.G. and Spear, W.E., Phil. Mag. B 53 (1986) L1, and references thereinGoogle Scholar
[19] Tiedje, T., Cebulka, J.M., Morel, D.L. and Abeles, B., Phys. Rev. Lett. 46 (1425) 1981 Google Scholar
[20] Fritzsche, H., J. Non-Cryst. Solids 77/78 (1985) 273 Google Scholar
[21] Spear, W.E., Steemer, H.L., Le Comber, P.G. and Gibson, R.A., Phil. Mag. B 50 (1984) L33 Google Scholar
[22] Evangelisti, F., Fiorini, P., Fortunato, G., Frova, A., Giovannella, G. and Peruzzi, R., J. Non-Cryst. Solids 55 (191) 1983 Google Scholar
[23] Street, R.A., Biegelsen, D.K. and Knights, J.C., Phys. Rev. B 24 (969) 1981 Google Scholar
[24] Morgado, E., Phil. Mag. B, to be publishedGoogle Scholar
[25] Friedrich, A. and Kaplan, D., J. Non-Cryst. Solids 35/36 (1980) 657 Google Scholar