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Red shifted-Photoluminescence of Ensembles of GaN Nano-Crystallites

Published online by Cambridge University Press:  15 February 2011

Leah Bergman ,
Xiang-Bai Chen ,
Joel Feldmeier  and
Andrew P. Purdy
Leah Bergman
Affiliation:
Department of Physics, University of IdahoMoscow, ID 83844-0903, Lbergman@uidaho.edu
Xiang-Bai Chen
Affiliation:
Department of Physics, University of IdahoMoscow, ID 83844-0903, Lbergman@uidaho.edu
Joel Feldmeier
Affiliation:
Department of Physics, University of IdahoMoscow, ID 83844-0903, Lbergman@uidaho.edu
Andrew P. Purdy
Affiliation:
Naval Research Laboratory, Chemistry Division, Washington, DC Fran Adar, Emmanuel Leroy, JYHoriba Group, Edison, NJ
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Abstract

We present optical analysis concerning the redshift of the photoluminescence (PL) of ensembles of GaN nano-crystals. We found that the extent of the redshift depends on the laser power as well as on the ensemble size. For ensemble of size ∼ 30 μm, the laser power in our experimental specification impacted the PL energy and caused a redshift of up to 120 meV. This phenomena was not observed for a small ensemble of ∼ 1 νm or less. For the small ensemble the PL redshift was negligible and depended weakly on the laser power; similar behavior was found in GaN thin film. The above findings were observed in the PL of GaN nano-crystalline of Wurtzite as well as cubic structure. Our results point to a laser heating event occurring in the large ensemble; the emitted and scattered light is confined among the nano-crystallites thus causing the heating. For a small ensemble the light has a higher probability of diffusing outside the enclosure, and thus no laser heating occurs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 776: Symposium Q – Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing , 2003 , Q1.1
Copyright
Copyright © Materials Research Society 2003

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