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Reducing density-induced CMP non-uniformity for advanced semiconductor technology nodes

Published online by Cambridge University Press:  21 August 2013

John H Zhang*
Affiliation:
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.
Wei-Tsu Tseng
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
Tien Chen
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
Ben Kim
Affiliation:
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.
Philip Flaitz
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
Walter Kleemier
Affiliation:
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.
Cindy Goldberg
Affiliation:
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.
Connie Truong
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
Stephan Grunow
Affiliation:
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A
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Abstract

In this paper, a novel set of macros with line/space width from 128nm/128nm, 64nm/64nm to 32nm/32nm was designed and installed on 20nm technology-node hardware. The pitch-dependent pad erosion post Cu CMP was studied by atomic-force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) quantitatively on these macros. Two methods were investigated to reduce the difference between pitch- and density-induced CMP non-uniformity. The first is using new scheme of partial Cu plating process followed by SiCNH insulator deposition and then CMP. The second is through the selection of slurries and pads. Both results are discussed in this paper.

Keywords

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

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