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Relationship between Structural and Electrical Properties of Zn-Based Contacts to p-GaAs : Towards the Mechanism of the Ohmic Contact Formation

Published online by Cambridge University Press:  03 September 2012

E. Kamińska ,
A. Piotrowska ,
S. Kasjaniuk  and
S. Gierlotka
E. Kamińska
Affiliation:
Institute of Electron Technology, AJ.Lotników 46, Warszawa, Poland, eliana@ite.waw.pl.
A. Piotrowska
Affiliation:
Institute of Electron Technology, AJ.Lotników 46, Warszawa, Poland, eliana@ite.waw.pl.
S. Kasjaniuk
Affiliation:
Institute of Electron Technology, AJ.Lotników 46, Warszawa, Poland, eliana@ite.waw.pl.
S. Gierlotka
Affiliation:
Unipress, PAS, Warszawa, Poland.
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Abstract

The relationship between electrical properties and microstructure of pure Zn and Au(Zn) contacts to p-GaAs has been studied. Thermally activated changes in ФB correlate with structural processes at MS interfaces. For Zn/GaAs contacts, lowering of ФB from 0.63 eV to 0.35 eV corresponds to the penetration of Zn into the native oxide layer. In AuZn/p-GaAs contacts, β-AuZn phase is responsible for the formation of ФB=0.4 eV in as-deposited contacts. The onset of the ohmic behaviour of Au(Zn)/p-GaAs contacts (ФB=0.3 eV) coincides with the appearance of α3-AuZn phase for Zn content less than 20 at.% or α1-AuZn, for higher Zn concentrations.

The obtained results prove that the mechanism responsible for the formation of low-resistance Zn -based contacts to p-type GaAs is associated with the lowering of the Schottky barrier at the metal/semiconductor interface. We suggest that the ultimate properties of these contacts are determined by the presence of a single, specific phase in a direct contact with the semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 401
Copyright
Copyright © Materials Research Society 1997

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References

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