Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-01-29T23:55:35.812Z Has data issue: false hasContentIssue false
  • English
  • Français

RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

Published online by Cambridge University Press:  01 February 2011

Naoki Hashimoto ,
Naohiro Kikukawa ,
Song-Bek Che ,
Yoshihiro Ishitani  and
Akihiko Yoshikawa
Naoki Hashimoto
Affiliation:
Department of Electronics and Mechanical Engineering
Naohiro Kikukawa
Affiliation:
Department of Electronics and Mechanical Engineering
Song-Bek Che
Affiliation:
Department of Electronics and Mechanical Engineering Center for Frontier Electronics and Photonics InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Yoshihiro Ishitani
Affiliation:
Department of Electronics and Mechanical Engineering Center for Frontier Electronics and Photonics InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Akihiko Yoshikawa
Affiliation:
Department of Electronics and Mechanical Engineering Center for Frontier Electronics and Photonics InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Get access

Abstract

We have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E4.4
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Yeo, W., Pharkya, A., and Eastman, L. F., Appl. Phys. Lett. 77, 2548 (2000).Google Scholar
2. Saito, Y., Teraguchi, N., Suzuki, A., Araki, T. and Nanishi, Y., Jpn. J. Appl. Phys. 40, L91 (2001).Google Scholar
3. Davydov, V. Yu., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., Furthmüller, J., Harima, H., Mudryi, A. V., Aderhold, J., Semchinova, O., and Graul, J., Phys. Status Solidi B 229, R1 (2002).Google Scholar
4. Ishitani, Y., Xu, K., Che, S. B., Masuyama, H., Terashima, W., Yoshitani, M., Hashimoto, N., Akasaka, K., Ohkubo, T., and Yoshikawa, A., Phys. Status Solidi. B 241, 849 (2004).Google Scholar
5. Che, S. B., Terashima, W., Ohkubo, T., Yoshitani, M., Hashimoto, N., Akasaka, K., Ishitani, Y., and Yoshikawa, A., Phys. Status Solidi C. (in press)Google Scholar
6. Nörenberg, C., Oliver, R.A., Martin, M.G., Allers, L., Castell, M.R., and Briggs, G.A.D., Phys. Status Solidi A 194, 536 (2002).Google Scholar
7. Ng, Y. F., Cao, Y. G., Xie, M. H., Wang, X. L., and Tong, S. Y., Appl. Phys. Lett. 81, 3960 (2002).Google Scholar
8. Briot, O., Maleyre, B., Ruffenach, S., Pinquier, C., Demangeot, F., and Frandon, J., Phys. Status Solidi. C 0, 2851 (2003).Google Scholar
9. Xu, K. and Yoshikawa, A., Appl. Phys. Lett. 83, 251 (2003).Google Scholar
10. Xu, K., Terashima, W., Hata, T., Hashimoto, N., Yoshitani, M., Cao, B., Ishitani, Y., and Yoshikawa, A. Phys. Status Solidi C 0, 2814 (2003).Google Scholar
11. Shen, X.-Q., Shimizu, M., and Okumura, H., Jpn. J. Appl. Phys. 42, L1293 (2003).Google Scholar