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Role of Si1−xGex Buffer Layer in Determining Electrical Characteristics of Modulation-Doped p-Si0. 5Ge0.5/Ge/Si1−xGex Heterostructures

Published online by Cambridge University Press:  28 February 2011

Eiichi Murakami ,
Hiroyuki Etoh ,
Akio Nishida ,
Kiyokazu Nakagawa  and
Masanobu Miyao
Eiichi Murakami
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Hiroyuki Etoh
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Akio Nishida
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Kiyokazu Nakagawa
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Masanobu Miyao
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
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Abstract

Electrical characteristics of modulation-doped p-Si0.5Ge0.5/Ge/Si1−x Gex heterostructures are examined in relation to Si fraction (1−X) and thickness (dB)of the buffer layer (Si1−xGex), using Raman spectroscopy and transmission electron microscopy. Strain-induced enhancement of hole mobility and concentration is observed in 1-X≦0.25. However, their decrease in 1-X≦0.25 and for small dB values is also observed, which is attributed to the increase in threading dislocations. As a result, a maximum hole mobility of 7600 cm2/Vs at 77 K is obtained at 1-X=0.25 and dB=1μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 491
Copyright
Copyright © Materials Research Society 1990

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References

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