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The Role of Trapped Interstitials During Rapid Thermal Annealing

Published online by Cambridge University Press:  26 February 2011

S. J. Pennycook  and
R. J. Culbertson
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
R. J. Culbertson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

During the rapid thermal annealing of ion implanted layers, trapped interstitials are responsible for transient enhanced dopant diffusion and the formation of a band of defects at the mean projected ion range. We describe the detailed nature and extent of these effects and show how they can be predicted in practice. We present a model which explains why trapping only occurs with group V implantation and describe double implantation experiments which confirm the model and show how the formation of projected range defects can be suppressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 37
Copyright
Copyright © Materials Research Society 1986

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