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Scanning Tunneling Microscopy for Hydrogen-Desorptioninduced Structural Change of Si(111) Surface

Published online by Cambridge University Press:  15 February 2011

Y. Morita ,
K. Miki ,
H. Tokumoto ,
T. Sato ,
T. Sueyoshi  and
M. Iwatsuki
Y. Morita
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan
K. Miki
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan
H. Tokumoto
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan
T. Sato
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan.
T. Sueyoshi
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan.
M. Iwatsuki
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan
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Abstract

A scanning tunneling microscopy (STM) has revealed an atomic structure of Si(111)-√3× √3R30° which is induced by the hydrogen desorption at about 500 °C. There exist domains with the √3× √3R30° structures, indicating that each domain is formed by rearrangement of Si adatoms around each cluster present at room temperature. Near the domain boundary, the adatoms locate mostly at T4 sites and occasionally at H3 sites. The dynamic nature of the adatoms are predicted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 295: Symposium W – Atomic-Scale Imaging of Surfaces and Interfaces , 1992 , 3
Copyright
Copyright © Materials Research Society 1993

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