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Search for New Semiconductors for High Temperature Applications:The BaPb1-x BixO3 System

Published online by Cambridge University Press:  10 February 2011

V. Ponnambalam  and
U. V. Varadaraju
V. Ponnambalam
Affiliation:
Materials Science Research Centre, Indian Institute of Technology Madras 600 036. INDIA.
U. V. Varadaraju
Affiliation:
Materials Science Research Centre, Indian Institute of Technology Madras 600 036. INDIA.
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Abstract

BaPbl-xBixO3 phases with 0.6⋚ x⋚ 1.0 were synthesized by high temperature solid state reaction. Powder X-ray diffraction measurements show that all compositions are in single phase. Linear variation of lattice parameter is observed in BaPb1-xBixO3 with change in x indicating the random distribution of Pb in Bi sites. The activation energies for conduction of phases with x=0.8−0.6 obtained from ρ −T plots are same suggesting that the band gap does not change for compositions with x-0.8−0.6. The low activation energy obtained for BaBiO3 can be attributed to the structure of the compound. S versus (1000/T) data of x=1.0−0.8 exhibit a two-slope behavior. The orthorhombic to cubic phase transition could be the possible reason for the high power factor values of BaBiO3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 423
Copyright
Copyright © Materials Research Society 1998

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References

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