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Self-Assembled InAs Islands on (AI,Ga)As, an In Situ Scanning Tunneling Microscopy Study

Published online by Cambridge University Press:  10 February 2011

P. Ballet ,
J.B. Smathers  and
G.J. Salamo
P. Ballet
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701. Pballet@comp.uark.edu
J.B. Smathers
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701.
G.J. Salamo
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701.
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Abstract

We report an in-situ molecular beam epitaxy – scanning tunneling microscopy study of three dimensional (3D) self organized InAs islands on (AI,Ga)As surfaces. The influence of the presence of Al atoms on the roughness of the starting surface and on the island density is shown by investigating several Al compositions. We emphasize the case of InAs/AlAs and point out the major differences between this system and the widely studied InAs/GaAs system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 165
Copyright
Copyright © Materials Research Society 2000

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References

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