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Silicon Thin Film Growth by Pulsed Plasma CVD under Near-Atmospheric Pressure

Published online by Cambridge University Press:  01 February 2011

Hirotatsu Kitabatake ,
Maki Suemitsu ,
Setsuo Nakajima ,
Tsuyoshi Uehara  and
Yasutake Toyoshima
Hirotatsu Kitabatake
Affiliation:
batake@suemitsu.riec.tohoku.ac.jp, Tohoku univ., CIR, Aramaki aza-Aoba aobaku, Sendai, Miyagi, 9808578, Japan, +81-22-217-5484, +81-22-217-5484
Maki Suemitsu
Affiliation:
suemitsu@cir.tohoku.ac.jp, Tohoku univ., CIR, Japan
Setsuo Nakajima
Affiliation:
nakajima040@sekisui.jp, Sekisui Chemicals Co. Ltd., Japan
Tsuyoshi Uehara
Affiliation:
uehara003@sekisui.jp, Sekisui Chemicals Co. Ltd., Japan
Yasutake Toyoshima
Affiliation:
y.toyoshima@aist.go.jp, AIST, Energy Technology Research Institute, Japan
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Abstract

Si Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Raman ratio of 7.4 are obtained on glass substrates, while epitaxial-like growth occurs when Si(100) substrates are employed, as confirmed by Raman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.

Keywords

plasma-enhanced CVD (PECVD) (deposition)Siepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE07-14
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

[1] Yuasa, M. and Yara, T.: Japan Patent 3040358 (1997)Google Scholar
[2] Matsumoto, M., Shima, M., Okamoto, S., Murata, K., Tanaka, M., Kiyama, S., Kakiuchi, H., Yasutake, K., Yoshii, K., Endo, K. and Mori, Y.: Proc. 3rd World Conf. Photovoltaic Energy Conversion, Osaka 2003 1552 (Arisumi Printing Inc, 2004)Google Scholar
[3] Mori, Y., Yoshii, K., Yasutake, K., Kakiuchi, H., Ohmi, H., Wada, K.: Thin Solid Films 444 138 (2003)Google Scholar
[4] Kitabatake, H., Suemitsu, M., Uehara, T., Kitahata, H., Nakajima, S. and Toyoshima, Y.: Jpn. J. Appl. Phys. 44 683 (2005)Google Scholar
[5] Iqbal, Z. and Veprec, S.: J. Phys. C. 15 377. (1982)Google Scholar
[6] Doerner, N.F. and Brennan, S.: J. Appl. Phys. 63 126. (1988)Google Scholar
[7] Birks, L.S. and Friedman, H.: J. Appl. Phys. 17 687. (1946)Google Scholar
[8] Edelman, F., Chack, A., Weil, R., Beserman, R., Khait, Yu. L., Werner, P., Reck, B., Roschek, T., Carius, R., Wagner, H. and Beyer, W.: Solar Energy Mat. Solar Cells 77 125.(2003)Google Scholar
[9] Droz, C., Vallat-Sauvain, E., Bailat, J., Feitknecht, L., Meier, J., Niquille, X. and Shah, A.: Proc. 3rd World Conf. Photovoltaic Energy Conversion, Osaka 2003 1544 (Arisumi Printing Inc, 2004)Google Scholar
[10] Nickel, N. H., Anderson, G. B., Johnson, N. M., and Walker, J.: PHYSICAL REVIEW B 62 12(2000)Google Scholar
[11] Heyman, J.N., Ager, J.W. III, Haller, E.E., Johnson, N.M., Walker, J., and Doland, C.M.: PHYSICAL REVIEW B 45 23(1992)Google Scholar