Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-15T07:01:41.394Z Has data issue: false hasContentIssue false
  • English
  • Français

Silver Metallization with Reactively Sputtered TiN DiffusionBarrier Films

Published online by Cambridge University Press:  17 March 2011

L. Gao ,
J. Gstöttner ,
R. Emling ,
Ch. Linsmeier ,
M. Balden ,
A. Wiltner ,
W. Hansch  and
D. Schmitt-Landsiedel
L. Gao
Affiliation:
Institute for Technical Electronics, Technical University Munich, D-80333, Munich, Germany
J. Gstöttner
Affiliation:
Institute for Technical Electronics, Technical University Munich, D-80333, Munich, Germany
R. Emling
Affiliation:
Institute for Technical Electronics, Technical University Munich, D-80333, Munich, Germany
Ch. Linsmeier
Affiliation:
Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748, Garching, Germany
M. Balden
Affiliation:
Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748, Garching, Germany
A. Wiltner
Affiliation:
Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748, Garching, Germany
W. Hansch
Affiliation:
Institute for Technical Electronics, Technical University Munich, D-80333, Munich, Germany
D. Schmitt-Landsiedel
Affiliation:
Institute for Technical Electronics, Technical University Munich, D-80333, Munich, Germany
Get access

Abstract

The physical and electrical properties as well as thermal stability ofreactively sputtered titanium nitride (TiN) film serving as a diffusionbarrier was studied for silver (Ag) metallization. The thermal stability ofAg/TiN metallizations on Si with 12-nm-thick TiN barriers, as-deposited andafter annealing at 300-650°C in N2/H2 for 30 min, wasinvestigated with sheet resistance measurement, X-ray diffraction, focusedion beam-scanning electron microscopy, atomic force microscopy and X-rayphotoelectron spectroscopy. According to electrical measurement no change ofsheet resistance was found after annealing at 600°C, but an abrupt riseappeared at 650°C annealing. There are two causes by which the Ag/TiN/Sistructure became degraded. One is agglomeration of the silver layer, and theother is oxidation and diffusion which are also associated problems duringthermal annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F8.3
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.International Technology Roadmap for Semiconductors, Semiconductor Industry Association, (2003).Google Scholar
2. Edelstein, D., Heidenreich, J. et al. , Techn. Digest Int. Electron Devices Meeting, 31 (1997).Google Scholar
3. Manepalli, R., Stepniak, F., Bidstrup, S.A., Kohl, P., IEEE Trans. Adv. Pack. 22, 4–8 (1999).CrossRefGoogle Scholar
4. Hauder, M., Hansch, W., Gstoettner, J., Schmitt-Landsiedel, D., Appl. Phys. Lett. 78, 838–840 (2001).CrossRefGoogle Scholar
5. Hauder, M., Gstoettner, J., Hansch, W., Schmitt-Landsiedel, D., Sensors and Actuators A 99, 137–143 (2002).CrossRefGoogle Scholar
6. Wang, Y., Alford, T.L., Appl. Phys. Lett. 74, 52–54 (1999).CrossRefGoogle Scholar
7. Moriyama, M., Kawazoe, T., Tanaka, M. et al. , Thin Solid Films 416, 136–144 (2002).CrossRefGoogle Scholar
8. Chen, J.S., Lu, K.-Y., Thin Solid Films 396, 204–208 (2001).Google Scholar
9. Barin, I., Thermochemical Data of Pure Substances, 3rd ed., Vol. 1&2, Weinheim (1995).CrossRefGoogle Scholar