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Simulation of the Steady-State Photocarrier Grating Method Applied to Amorphous Materials

Published online by Cambridge University Press:  21 February 2011

C.-D. Abel  and
G. H. Bauer
C.-D. Abel
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, W-7000 Stuttgart-80, F.R. Germany
G. H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, W-7000 Stuttgart-80, F.R. Germany
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Abstract

General features of the steady-state photocarrier grating technique applied to amorphous semiconductors are investigated by complete numerical simulation. The results are interpreted with an analytical model which delivers a closed-form expression for β(A,E) assuming dominance of one carrier type. The variation of the electric field E instead of the grating period A is suggested as an easier and more accurate tool for the experimental technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 705
Copyright
Copyright © Materials Research Society 1992

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References

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