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Single Crystalline InN Films Grown on Si Substrates By Using A Brief Substrate Nitridation Process

Published online by Cambridge University Press:  11 February 2011

Tomohiro Yamaguchi ,
Kazuhiro Mizuo ,
Yoshiki Saito ,
Takuma Noguchi ,
Tsutomu Araki ,
Yasushi Nanishi ,
Takao Miyajima  and
Yoshihiro Kudo
Tomohiro Yamaguchi
Affiliation:
Department of Photonics, Ritsumeikan University, 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, JAPAN.
Kazuhiro Mizuo
Affiliation:
Department of Photonics, Ritsumeikan University, 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, JAPAN.
Yoshiki Saito
Affiliation:
Department of Photonics, Ritsumeikan University, 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, JAPAN.
Takuma Noguchi
Affiliation:
Department of Photonics, Ritsumeikan University, 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, JAPAN.
Tsutomu Araki
Affiliation:
Department of Photonics, Ritsumeikan University, 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, JAPAN.
Yasushi Nanishi
Affiliation:
Department of Photonics, Ritsumeikan University, 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, JAPAN.
Takao Miyajima
Affiliation:
Core Technology Development Center, Core Technology & Network Company, Sony Corporation, 4–14–1 Asahi-cho, Atsugi, Kanagawa 243–0014, JAPAN.
Yoshihiro Kudo
Affiliation:
Technology Solutions Center, Sony Corporation, 4–16–1 Okata, Atsugi, Kanagawa 243–0021, JAPAN.
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Abstract

InN films were grown on Si (111) substrates by radio-frequency plasma-excited molecular beam epitaxy. InN films highly oriented to the c-axis were obtained by optimizing growth conditions in the direct growth on Si. Growth of single crystalline InN films was realized on Si substrates with substrate nitridation for 3 min. On the other hands, when the substrate nitridation was lasted over 30 min, obtained InN films were polycrystalline due to the amorphous SiNx layer formed on a substrate surface. We also studied the local atomic structure in the single crystalline InN film using extended X-ray absorption fine structure measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.26
Copyright
Copyright © Materials Research Society 2003

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