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Smart‐Cut® : The Basic Fabrication Process for Unibond® Soi Wafers

Published online by Cambridge University Press:  10 February 2011

A.J. Auberton‐Hervé ,
T. Barge ,
F. Metral ,
M. Bruel ,
B. Aspar ,
C. Maleville ,
H. Moriceau  and
T. Poumeyrol
A.J. Auberton‐Hervé
Affiliation:
SOITEC SA, 1, Place Firmin Gautier, 38000 Grenoble France.
T. Barge
Affiliation:
SOITEC SA, 1, Place Firmin Gautier, 38000 Grenoble France.
F. Metral
Affiliation:
SOITEC SA, 1, Place Firmin Gautier, 38000 Grenoble France.
M. Bruel
Affiliation:
LETI ‐ DMITEC ‐ CEA/G ‐ 17, rue des Martyrs ‐ F38054 Grenoble Cedex 9
B. Aspar
Affiliation:
LETI ‐ DMITEC ‐ CEA/G ‐ 17, rue des Martyrs ‐ F38054 Grenoble Cedex 9
C. Maleville
Affiliation:
LETI ‐ DMITEC ‐ CEA/G ‐ 17, rue des Martyrs ‐ F38054 Grenoble Cedex 9
H. Moriceau
Affiliation:
LETI ‐ DMITEC ‐ CEA/G ‐ 17, rue des Martyrs ‐ F38054 Grenoble Cedex 9
T. Poumeyrol
Affiliation:
LETI ‐ DMITEC ‐ CEA/G ‐ 17, rue des Martyrs ‐ F38054 Grenoble Cedex 9
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Abstract

The advantage of SOI wafers for device manufacture has been widely studied. To be a real challenger to bulk silicon, SOI producers have to offer SOI wafers in large volume and at low cost. The new Smart‐Cut® SOI process used for the manufacture of the Unibond® SOI wafers answers most of the SOI wafer manufacturability issues. The use of Hydrogen implantation and wafer bonding technology is the best combination to get good uniformity and high quality for both the SOI and buried oxide layer. In this paper, the Smart‐Cut® process is described in detail and material characteristics of Unibond® wafers such as crystalline quality, surface roughness, thin film thickness homogeneity, and electric behavior.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 177
Copyright
Copyright © Materials Research Society 1997

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References

1 Auberton‐Hervé, A.J., Lamure, J.M., Barge, T., Bruel, M., Aspar, B. and Pelloie, J.L., Semiconductor International, 11, October 1995, p.97.Google Scholar
2 Craven, R.A. and Downey, W.P., in Semiconductor Wafer Bonding: Physics and Applications III / 1995, Hunt, C.E., Baumgart, H., Iyer, S.S., Abe, T. and Gosele, U., Editors, PV 95–7, p. 4, The Electrochemical Society Series, Pennington, NJ(1995).Google Scholar
3 Bruel, M., Nuclear instruments and methods in Physics Research B,108 (1996), 313–319.Google Scholar
4 Bruel, M., Electronic Letters, 31 (14), 1201 (1995).Google Scholar
5 Bruel, M., Aspar, B., Charlet, B., Maleville, C., Poumeyrol, T., Soubie, A., Auberton‐Hervé, A.J., Lamure, J.M., Barge, T., Metral, F., Trucchi, S., in 1995 IEEE International SOI Conference proceeding, Oct. 1995, IEEE N° 95CH35763, 178.Google Scholar
6 Stengl, R., Tan, T. and Gösele, U., Jpn. J. Appl. Phys., 28, 1735 (1989).Google Scholar
7 Horning, R.D. and Martin, R.R., in Semiconductor Wafer Bonding: Phisics and Applications II / 1993, Schmidt, M.A., Abe, T., Hunt, C.E. and Baumgart, H., Editors, PV 93–29, p. 199, The Electrochemical Society Series, Pennington, NJ (1993).Google Scholar
8 Moriceau, H., Maleville, C., Cartier, A.M., Aspar, B., Soubie, A., Bruel, M., Poumeyrol, T., Metral, F., Auberton‐Hervé, A.J., submitted to 1996 IEEE International SOI Conference Google Scholar
9 Guilhamenc, C., submitted to Phys. Rev. BGoogle Scholar
10 Sadana, D.K., Lasky, J., Hovel, H.J., Petrillo, K., Roitman, P., in 1994 IEEE International SOI Conference proceeding, October 3–5, 1994, IEEE n°94CH35722, p 111.Google Scholar
11 Cristoloveanu, S. and al., SOI Techno, and Devices VII / 1996, P.L.F. Hemment and al. Editors, PV 96–3, p 142, The ECS Series, Pennington, NJ (1996).Google Scholar