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Soft X-ray Si 2p core-level spectra of H8Si8O12 physisorbed on Si(111)-H: additional experimental evidence regarding the binding energy shift of the HSi03 fragment

Published online by Cambridge University Press:  10 February 2011

K. Z. Zhang ,
Mark M. Banaszak Holl  and
F. R. McFeely
K. Z. Zhang
Affiliation:
Chemistry Department, University of Michigan, Ann Arbor, MI 48109-1055
Mark M. Banaszak Holl
Affiliation:
Chemistry Department, University of Michigan, Ann Arbor, MI 48109-1055
F. R. McFeely
Affiliation:
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
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Abstract

The hydridospherosiloxane cluster H8Si8012 has been physisorbed onto Si(111)-H and soft X-ray Si 2p core-level photoemission spectra obtained. The results of these experiments provide strong support for previous binding energy assignments of HSi03 moieties at -3.6 eV.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 241
Copyright
Copyright © Materials Research Society 1997

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References

1 a) Banaszak Holl, M. M. and McFeely, F. R., Phys. Rev. Lett. 72, 2441 (1993). b) S. Lee, S. Makan, M. M. Banaszak Holl, and F. R. McFeely, J. Am. Chem. Soc. 116, 11819 (1994). c) F. R. McFeely, K. Z. Zhang, M. M. Banaszak Holl, S. Lee, and J. E. Bender IV, J. Vac. Sci. Technol. B 14, 2824 (1996). d) K. Z. Zhang, M. M. Banaszak Holl, J. E. Bender IV, S. Lee, and F. R. McFeely, Phys. Rev. B 54, 7686 (1996). e) K. Z. Zang, L. M. Meeuwenberg, M. M. Banaszak Holl, and F. R. McFeely, Jpn. J. Appi. Phys., in press.Google Scholar
2 For lead references see: a) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, edited by Helms, C. R. and Deal, B. E. (Plenum, New York, 1993). b) The Physics and Technology of Amorphous S1O2 , edited by R. A. B. Devine (Plenum, New York, 1988). c) SiO2 and Its Interfaces , edited by S. T. Pantelides and G. Lucovsky, G., Mat. Res. Soc. Symp. Proc. 1990. d) The Physics and Technology of Amorphous Silicon Dioxide, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1989).Google Scholar
3 a) Grunthaner, P. J., Hecht, M. H., Grunthaner, F. J., and Johnson, N. M., J. Appi. Phys. 61, 629 (1987). b) F. J. Grunthaner and P. J. Grunthaner, Mater. Sci. Reports 1, 65 (1986).Google Scholar
4 Kuroda, T. and Iwakuro, H., Jpn. J. Appi. Phys. 32, L1273 (1993).Google Scholar
5 a) Fortunato, G., Mariucci, L., Pecora, A, Fanfoni, M., and Priori, S., Appi. Phys. Lett. 60, 1564 (1992). b) M. Fanfoni, A Pecora, G. Fortunato, L. Mariucci, S. Priori, and C. Quaresima, J. Non-Cryst. Solids 137&138, 1079 (1991).Google Scholar
6 a) Hattori, T., J. Vac. Sci. Technol. B 11, 1528 (1993). b) H. Ogawa and T. Hattori, Appi. Phys. Lett. 61, 577 (1992). c) H. Ogawa, N. Terada, K. Sugiyama, K. Moriki, N. Miyata, T. Aoyama, R. Sugino, T. Ito, and T. Hattori, Appi. Surf. Sci. 56-58, 836 (1992). d) T. Hattori, Thin Solid Films 206, 1 (1991). e) N. Terada, H. Ogawa, K. Moriki, A. Teramoto, K. Makihara, M. Morita, T. Ohmi, and T. Hattori, Jpn. J. Appi. Phys., 30, 3584 (1991). f) K. Sugiyama, T. Igarashi, K. Moriki, Y. Nagawasa, T. Aoyama, R. Sugino, T. Ito, and T. Hattori, Jpn. J. Appi. Phys., 29, L2401 (1990).Google Scholar
7 a) Hattori, T., Crit. Rev. Solid State Mater. Sci. 20, 339 (1995). b) T. Hattori, K. Watanabe, M. Ohashi, M. Matsuda, and M. Yasutake, Appi. Surf. Sci. 102, 86 (1996).Google Scholar
8 An example of the use of the -3.6 eV assignment for HSO3 in Si/SiO2 interface work can be found in: Lee, S., Banaszak Holl, M. M., Hung, W. H., and McFeely, F. R., Appi. Phys. Lett. 68, 1081 (1996).Google Scholar
9 Pasquarello, A., Hybertson, M. S., and Car, R., Phys. Rev. B, 54, R2339 (1996).Google Scholar
10 a) Agaskar, P. A., Inorg. Chem. 30, 2707 (1991). b) P. A. Agaskar and W. G. Klemperer, Inorg. Chim. Acta 229, 355 (1995).Google Scholar
11 Karlsson, C. J., Landemark, E., Johansson, L. S. O., Karlsson, U. O., and Uhrberg, R. I. G., Phys. Rev. B 41, 1521 (1990).Google Scholar
12 a) Himpsel, F. J., McFeely, F. R., Taleb-Ibrahimi, A., Yarmoff, A., and Hollinger, G., Phys. Rev. B. 38, (1988) 6084. b) F. J. Himpsel; F. R. McFeely; J. F. Morar; A. Taleb-Ibrahimi, and J. A. Yarmoff in Proceedings of the 1988 Enrico Fermi School on Photoemission and Absorption Spectroscopy of Solids and Interfaces with Synchrotron Radiation (North Holland, Varenna, 1988).Google Scholar
13 Calzaferri, G. and Hoffmann, R., J. Chem. Soc. Dalton Trans. 917 (1991).Google Scholar
14 Earley, C. W., J. Phys. Chem. 98, 8693 (1994).Google Scholar
15 Pasquarello, A., Hybertson, M. S., Car, R., Phys. Rev. B 53, 10942 (1996).Google Scholar