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Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

Published online by Cambridge University Press:  11 February 2011

C. L. Zhao ,
Z. H. Wang ,
W. Zhu ,
O. K. Tan  and
H. H. Hng
C. L. Zhao
Affiliation:
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
Z. H. Wang
Affiliation:
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
W. Zhu
Affiliation:
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
O. K. Tan
Affiliation:
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
H. H. Hng
Affiliation:
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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Abstract

Lead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U14.9
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Polla, D. L., Ye, C., and Tamagawa, T., Apply Phys. Lett. 59, 3539 (1991).Google Scholar
2. Eddy, D. S., and Sparks, D. R.. Proc IEEE 86, 1747 (1998).Google Scholar
3. Vest, R., Ferroelec. 102, 53 (1990).Google Scholar
4. Lebedev, M., Akedo, J., and Akiyama, Y., Jpn. Appl. Phys. 39, 5600 (2000).Google Scholar
5. Yasuda, Y., Akamatsu, M., Tani, M., Yoshida, M., Kondo, K., and Iijima, T., Jpn. Appl. Phys. 40, 5518 (2001).Google Scholar
6. Barrow, D. A., Petroff, T. E., Tandon, R. P., and Sayer, M., J. Appl. Phys. 81, 876 (1997).Google Scholar
7. Sayer, M., Lukacs, M., Olding, T., Pang, G., Zou, L., and Chen, Y., Mat. Res. Soc. Symp. Proc. 541, 599 (1999).Google Scholar
8. Sayer, M., Lockwood, G. R., Olding, T. R., Pang, G., Cohen, L. M., Ren, W., and Mukherjee, B. K., Mat. Res. Soc. Proc. 655, cc13.6 (2001).Google Scholar
9. Zhao, C., Wang, Z., Zhu, W., Yao, X., and Liu, W., Int. J. Mod. Phys. B, 16, 242 (2002).Google Scholar
10. Zhu, W., Wang, Z., Zhao, C., Tan, O., and Hng, H., Jpn. J. Appl. Phys. 41, 11 (2002).Google Scholar